@Article{CapoteJaMiLeViFr:2007:DeHaAm,
author = "Capote, Gil and Jacobsohn, L. G. and Michel, M. D. and Lepienski,
C. M. and Vieira, A. L. and Franceschini, D. F.",
affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and Materials
Science \& Technology Division, Los Alamos National Laboratory
and Departamento de F{\'{\i}}sica, Universidade Federal do
Paran{\'a} and Departamento de F{\'{\i}}sica, Universidade
Federal do Paran{\'a} and Instituto de F{\'{\i}}sica,
Universidade Federal Fluminense and Instituto de F{\'{\i}}sica,
Universidade Federal Fluminense",
title = "Deposition of hard amorphous hydrogenated carbon films by
radiofrequency parallel-plate hollow-cathode plasmas",
journal = "Diamond and Related Materials",
year = "2007",
volume = "16",
number = "3",
pages = "626--622",
month = "Mar.",
keywords = "Hollow-cathode, Plasma deposition, Amorphous hydrogenated carbon,
Mechanical properties.",
abstract = "Hard amorphous hydrogenated carbon (a-C:H) films were deposited by
plasma decomposition of CH4 gas in a RF parallel-plate
hollow-cathode system. The deposition system was built by placing
a metallic plate in parallel to and in electrical contact with an
usual RF-PECVD planar cathode. Self-bias versus RF power curves
were used to make an initial characterization of plasma discharges
in nitrogen gas atmospheres, for pressures between 10 and 100
mTorr. The strongly increased power consumption to obtain the same
self-bias in the hollow-cathode system evidenced an increase in
plasma density. The a-C:H films were deposited onto Si single
crystalline substrates, in the \− 50 to \− 500 V
self-bias range, at 5, 10 and 50 mTorr deposition pressures. The
film deposition rate was found to be about four times than that
usually observed for single-cathode RF-PECVD-deposited films,
under methane atmosphere, at similar pressure and self-bias
conditions. Characterization of film structure was carried out by
Raman spectroscopy on films deposited at 10 and 50 mTorr
pressures. Gaussian deconvolution of the Raman spectra in its D
and G bands shows a continuous increase in the ID/IG integrated
band intensity ratio upon self-bias increase, obeying the expected
increasing behavior of the sp2 carbon atom fraction. The peak
position of the G band was found to increase up to \− 300 V
self-bias, showing a nearly constant behavior for higher self-bias
absolute values. On the other hand, the G band width showed a
nearly constant behavior within the entire self-bias range.
Nanohardness measurements have shown that films deposited with
self-bias greater than 300 V are as hard as films obtained by the
usual PECVD techniques, showing a maximum hardness of about 18
GPa. Films were also found to develop high internal compressive
stress. The stress dependence on self-bias showed a strong maximum
at about \− 200 V self-bias, with a maximum stress value of
about 5 GPa.",
copyholder = "SID/SCD",
doi = "10.1016/j.diamond.2006.11.052",
url = "http://dx.doi.org/10.1016/j.diamond.2006.11.052",
issn = "0925-9635",
language = "en",
targetfile = "deposition of hard.pdf",
urlaccessdate = "02 maio 2024"
}